AO4402 20v n-channel mosfet v ds i d (at v gs =4.5v) 20a r ds(on) (at v gs =4.5v) < 5.5m w r ds(on) (at v gs =2.5v) < 7m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl mj 2 t a =70c junction and storage temperature range -55 to 150 c v 12 gate-source voltage 16 units parameter typ max c/w r q ja 31 59 40 the AO4402 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 a 57 t a =25c t a =70c pulsed drain current c continuous drain current a i d 20 140 w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 power dissipation b p d 24 maximum junction-to-ambient a t a =25c avalanche current c 162 avalanche energy l=0.1mh c thermal characteristics g d s soic-8 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.5 1 1.6 v i d(on) 140 a 4.6 5.5 t j =125c 5.8 7 5.5 7 m w g fs 105 s v sd 0.6 1 v i s 4 a c iss 3080 3860 4630 pf c oss 520 740 960 pf c rss 350 580 810 pf r g 0.6 1.4 2.1 w q g (4.5v) 28 36 43 nc q gs 7 9 11 nc q gd 7 12 17 nc t d(on) 7 ns t r 8 ns t d(off) 70 ns t f 18 ns t rr 13 17 20 ns q rr 29 36 43 nc body diode reverse recovery charge i f =20a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =0.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =20a gate source charge gate drain charge m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =2.5v, i d =18a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =4.5v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =10v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c.maximum avalanche current limited by tester capability. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. www.freescale.net.cn 2/6 AO4402 20v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 20 40 60 80 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 10 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance 3 4 5 6 7 8 9 10 0 2 4 6 8 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) www.freescale.net.cn 3/6 AO4402 20v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c oss c rss v ds =10v i d =20a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) 10ms 10.0 100.0 1000.0 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c) i ar (a) peak avalanche current www.freescale.net.cn 4/6 AO4402 20v n-channel mosfet
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75c/w www.freescale.net.cn 5/6 AO4402 20v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AO4402 20v n-channel mosfet
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